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Culture of Neuroendocrine and Neuronal Cells for Tissue Engineering 387
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 ESD stress is applied to the transceiver chip input signals.  An ESD gun or ESD pulse system is directly connected to the subject pin, and the stimulus is applied.  Each pin on the evaluation card is connected to signals, power, and grounds in the transceiver.  Differential input TX_IN pins would be the source signal, and the return signal path was either the power or the ground pin. Both positive and negative polarities are tested.  TDR measurements were evaluated post-ESD stress. An ESD impulse is applied to the port when the system is unpowered; the system is then retested using the TDR test methodology.  Post-ESD stress output eye test is evaluated to observe system level degradation effects. Prior to ESD testing, the functional system is characterized. The experiment is started by observing the input TDR signal when the system is powered down. The TDR system consists of a Tektronix SD24 TDR Sampling head in a Tektronix 11801C oscilloscope. The Tektronix 20 GHz SD24 TDR sampling plug-in has a 15 ps rise time into a load and a 35 ps re ected wave rise time. The Tektronix 11801C has a 50 GHz sampling rate. After power-up the data input signal stream is initiated, and the output optical eye patterns are recorded prior to any ESD testing. The transceiver/receiver chip was rst analyzed followed by full system evaluation. The ESD test method establishes a procedure to apply ESD pulses to all pads on the transceiver via externally placed pins. An ESD gun Mini-Zap 2000 is directly connected to the subject pin and the stimulus is applied in accordance to the JEDEC Standard (JESD22-A114-B). The ESD gun Mini-Zap 2000 is wired to the desired pins for source and return. Each pin on the evaluation card is connected to signals, power, and grounds in the transceiver. In this particular test, one of the TX_IN pins would be the source signal, and the return signal path was either the power or the ground pin. Note that both positive and negative ESD pulse polarities can be evaluated. The source/return path from the ESD gun Mini-Zap 2000 lead is in the following order: stimulus pin, card trace, card connector, transceiver connector, transceiver trace/component, and nally MICC chip input (TX_IN). An ESD pulse stress is applied to the port when the system is unpowered; the system is then retested using the TDR test methodology. An example of the results below shows the characteristics of a system of a 1 GHz path for stress at 2000 V and at more than 2000 V. In the test system, the semiconductor chip that may be vulnerable to ESD events is the SFF transceiver chip, which consists of RF components. In this application, a 45 GHz fT SiGe hetero-junction bipolar transistor technology is used in the transceiver chip. Figure 1.10 shows a high-level diagram of the transceiver chip architecture. In the diagram, the differential inputs, the ampli ers, and the diode laser signals are shown. Measurements were taken at different stress levels, evaluating the TX-pin distortion. HBM stressing was performed on the transceiver chip to determine the ESD sensitivity of the signal pins. Table 1.8 shows a table of transmission and re ection signal magnitudes at a magnitude of 2000 V HBM ESD stress. Each line in the table represents a different module placed under ESD stress. Various system level parameters of amplitude and loss are recorded
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In Windows or Macintosh OS 10 or later, click Open. In Macintosh OS 9.X or earlier, click Add to add the selected file to the Import list, and click
Keep a few things in mind here. All MT tags that show up within MT EmbedImage tags are escaped with [ and ] in place of < and >. In addition, attributes within those escaped MT tags are set with single quotation marks.
A continuous channel with power spectral density N0 /2, bandwidth B and signal power P can be converted into a discrete channel by sampling it at the Nyquist rate. The noise sample power is equal to PN = Then Cs = P 1 log2 1 + 2 N0 B (70)
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