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1. Open the part from the CD-ROM called 27 Offset Tutorial.SLDPRT. 2. Right-click a curved face of the part and click Select Tangency in the menu. 3. From the Surfaces toolbar, click Offset Surface, and set the surface to offset to the outside of the part by .060 inches. You can tell when the surface is offsetting to the outside when the transparent preview appears. If you do not see the transparent preview, then toggle the Flip Offset Direction arrow button. Click OK to accept the feature when you are satisfied.
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Constructing Excel PivotTables using a multidimensional data source Constructing Excel PivotTables using a relational data source Creating PivotCharts Exposing relational data with Excel data ranges Analyzing multidimensional data with Data Analyzer
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Authentication, 290, 654, 683, 684 Authorization, 290, 683 Autodialer, 105 Automated attendant, 170, 173 Automatic call distributor (ACD), 103, 112, 122, 127, 131 137, 132f, 133f Automatic callback, 128 Automatic gain control (AGC), 261 Automatic line selection, 106 Automatic location identi cation (ALI), 590 Automatic number identi cation (ANI), 111, 133, 173 Automatic protection system (APS), 481 Automatic repeat request (ARQ), 411, 414, 457, 583 Automatic route selection (ARS), 110, 127. See also Least cost routing (LCR) Automatic set relocation, 114 Automatic speech recognition (ASR), see Speech recognition Automatic teller machine (ATM), 519 Available bit rate (ABR), 520, 530, 532, 536 Available/unspeci ed frame rate, 514 Avalanche photodiode (APD), 90 91 B Backhaul, 453, 459 Backhoe fade, 65, 75 Backward explicit congestion noti cation (BECN), 503f, 504 505, 507, 508 Balanced medium, 48 Balun, 58 Band-limiting lter, 261 Bandpass lter, 14 Bandwidth, 10, 17, 42, 53, 64, 72, 93, 607 609 Barge-in, 106 Barker code, 400 Base station (BS), 455 Baseband signal, 255, 367f, 368 Baseband LAN, see Local area network Basic multilingual plane (BMP), 277 Basic Rate Access (BRA), see Integrated Services Digital Network (ISDN) Basic Rate Interface (BRI), see Integrated Services Digital Network (ISDN) Basic service, 218, 515 Basic trading area (BTA), 452 Baud, 11, 254 Baud rate, 11, 254 Baudot, 273 274, 289 B-Channel, see Integrated Services Digital Network (ISDN) Bearer Channel, see Integrated Services Digital Network (ISDN) Bell, Alexander Graham, 550, 717 Bell Atlantic, 708 Bell Dataset, 297
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combination of the scattering length for emission of optical phonons and impact ionization), Em is maximum value of the channel lateral electric field, P(Eox]L) is the probability of a hot electron traveling from the generation site to the peak of the oxide potential barrier without inelastic scattering, Eox is the field across the gate oxide at the drain pinchoff point, given approximately by Eox (VDS - VGs)/tox, and 4JB is the potential barrier between the silicon conduction band and the oxide conduction band, given by 42B = 3.2 -- PE/-E-"x -- (Eox)31/ 2 , eV where P3 are and constant parameters. The first term in the barrier height expression accounts for image-force lowering and the second for effective tunneling lowering. Design of the drain-side CHE cell involves several tradeoffs. For efficient programming, it is desirable to maximize the lateral electric drain field to generate high-energy electrons. Factors that tend to advance this goal are to shorten the channel length, have an abrupt drain junction, and have a relatively high channel doping. However, there is a minimum allowed channel length. If the channel is too short, a device on an unselected row may punch through, which gives rise to excess bit line current and inadvertent programming of the cell. For cells without a seriesselect gate, coupling of the drain bias to the floating gates on the unselected rows can exacerbate punch through, an effect referred to as drain turnon. Increasing the channel doping concentration increases the threshold of erased cells, which reduces the read current. Several factors limit the efficiency of this injection mechanism. One factor is that hot electrons are only a by-product of the channel current. Most of the channel electrons don't become hot enough to surmount the oxide energy-barrier because of electron-phonon scattering. Those hot electrons that are created have momentum parallel to the oxide-silicon interface. They must be scattered to be redirected toward the interface. Finally, as is shown in the potential diagrams in Figure 8.4, over most of the depletion region the potential between the floating gate and channel regions is repulsive for the injection of electrons. Only in the immediate vicinity of the pinch off region are there both hot carriers and an attractive field. Typical values for the injection efficiency of a drain-side channel hot-electron injection structure shown in Figure 8.4 are _ 10 6. Source-Side Electron Injection An approach to channel hot-electron injection that has demonstrated significant improvement in injection efficiency is what is 2 commonly referred to as source-side injection." This technique adds an injection gate adjacent to the source side of the floating-gate as is illustrated in Figure 8.5. The injection gate is biased only slightly above threshold. This serves to reduce the channel current and provides a pinchoff region at the drain end of the injection gate, which is near the source of the floating gate. The floating gate is capacitively coupled by a control gate to a positive voltage. Electrons flowing through the channel of the injection gate are accelerated in the high electric field resulting from the potential difference between the injection and control gates so that they become hot. The hot electrons are injected into the depletion region that exists under the floating gate because the drain is biased sufficiently positive to keep the relatively small number of electrons injected by the injection transistor swept out of the region. The hot
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To start a new part in the context of an assembly, we will first assume that the assembly contains another part. Creating a new part in a blank assembly is not very interesting. In this case, I am using the assembly shown in Figure 16.1. Once the first part is in the assembly, you must save the assembly before creating a new part in it. This is because the update holder needs to reference a particular filename, and the assembly has no filename until you save it. To create the new part, click Insert Component New Part. This command is also available through a toolbar button that you can place on the Assembly toolbar (it is not there by default). At this point, SolidWorks prompts you to first name the part, and then select a face or plane on which to locate the new part. The selected face or plane actually determines the Front plane of the new part, and a mate is added to the assembly.
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Major potential problems include:
2) When the load is open-circuited, that is, ZL , (14.25)
Manipulating the view Using view tools Understanding RealView Using Display States Tutorial: Visualization techniques
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Housing Market, Worst, 6 Best Division 1, Real Estate Investment Profit $2 million $1 million 0 $1 million $2 million $3 million Average $500,000 Division 2, Home Loan Profit $3 million 0 0 $2 million $2 million $2 million $500,000
27.1 OVERALL PERFORMANCE OF A TYPICAL RF RECEIVER Figure 27.1 shows the overall performance of a typical RF receiver. IF output power from the mixer is shown as a function of RF input power coming into the antenna. When the receiver is rst turned on, with no RF signal applied, there is an IF output signal of 2116 dBm. This is the noise oor. It is the RF thermal noise of the receiver that has been downconverted to IF. When the RF input power is then turned on at a power level of 2140 dBm (lefthand edge, Fig. 27.1), there appears to be no IF signal. This is because the downconverted signal is below the downconverted noise oor. As the RF input power is increased to 2122 dBm, the downconverted IF signal just breaks through the noise oor. The RF signal at this point is de ned as the minimum detectable signal (MDS). The receiver is not useful for communication purposes at this point, because the S/N is 0 and therefore a signal cannot be demodulated.
Figure 18-24: The TIP supports a rich array of configurable options.
Language Issues
The applications for digital carrier are many. Large user organizations nd digital carrier services to be highly cost effective for local loop access, typically replacing multiple, single-channel PBX trunks. Large corporations nd T/E-carrier effective for private, leased-line networks or access to VPNs. The ability of T/E-carrier to accommodate voice, facsimile, data, video, and image information on an unbiased basis and, therefore, to eliminate or reduce the number and variety of specialized circuits offers great advantage. Internet Service Providers (ISPs) commonly use channelized T/E1 to provide modem-based access to small users requiring channel width of no more than 64 kbps. This channel width is perfect for even the highest speed conventional modems (i.e., V.90 and V.92 at 53.3 kbps upstream), which gain access to the ISP on a dial-up basis through the circuit-switched PSTN. ISPs commonly make use of unchannelized T-carrier (T/E1 or T/E3) for access to an Internet backbone provider. The unchannelized approach is preferred for this application because data typically move between the ISP and the Internet backbone provider using the Frame Relay or ATM protocol, both of which I discuss in 10. Although private leased-line T/E-carrier networks largely have given way to newer LAN internetworking technologies such as Frame Relay and IP networking, embedded T/E-carrier networks continue in place and are expanded at times. Incidentally, Frame Relay and T-carrier naturally coexist. A large number of user organizations now run Frame Relay data over the dedicated, leased-line networks they put in place years ago for PCM-based voice traf c. Also, access to ATM, Frame Relay, and IP networks commonly is accomplished over unchannelized T/E-carrier circuits.
fT = nsat/(2pL2) drain fT = FE(Vgs VT) /(2pL2)
To edit a Crop view, RMB click the view, expand the arrow next to Crop View, and select either Edit Crop or Remove Crop. Removing the crop does not delete the sketch that the crop was created from.
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