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Call Signaling Channel. This channel transports Q.931 protocol messages ( 10), as amended by Rec. H.225. It provides signaling communication between H.323 endpoints for basic call-control messages (call setup and release) and to obtain the transport address of the control channel. It uses TCP transport. Control Channel. This channel transports H.245 protocol messages [3]. It provides signaling communication between H.323 endpoints to control (open and close) Logical Channels and to negotiate and modify media parameters. This channel may also be used for authentication and encryption, according to Rec. H.235 [4]. It uses TCP transport. Logical Channel. This channel transports RTP/RTCP messages (Section 20.4.1) for media (bearer) ows. It consists of a RTP and a RTCP connection between two H.323 endpoints, set up via H.245 messages on the Control Channel. There can be one bidirectional channel or multiple unidirectional channels in a connection, allowing for asymmetric media communication. This channel uses UDP transport. 21.2.3 H.323 Call-Control Messages and Parameters
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As noted in Section 4.2, additional methods to control dielectric behavior include compositional grading and highly structured laminates. The laminates should contain multiple, discrete layers of different materials that are selected to maximize the product of dielectric constant and breakdown eld. On the basis of high-temperature approaches and compromised morphologies of traditionally processed solution-derived lms, the multilayer, laminated approach to structured dielectrics would be deemed impractical. The processing conditions and lm qualities described in this chapter, however, have provided a means to deposit for the rst time via solution such laminates, exhibiting qualities that are unsurpassed by any other known deposition technique. As shown by the transmission electron microscopy (TEM) image of Fig. 4.12, lms of HafSOx and its zirconium analog ZircSOx can be interleaved to form very high-resolution, high-order multilayer structures. An accurate bilayer thickness within the laminate can be readily determined from X-ray re ectivity (XRR) measurements, which also provide con rmation of the abrupt interfaces (<0.2 nm by XRR) that are visually evident in Fig. 4.12. Although we have not fully characterized the physical properties of the laminates, they do offer unique opportunities for development of highly structured dielectrics. For tuning purposes, individual lm thickness can already be varied in a controllable manner from 3 to several hundred nanometers. In addition, the lm stack can be deposited with variable levels of hydration, providing explicit control over lm interdiffusion. For example, high-order dehydrated stacks exhibiting stability to high temperatures can be produced by dehydrating individual lms during each deposition step. Alternatively, stacks can be initially deposited at low temperatures with retention of water and then subsequently heated at higher temperatures to promote intermixing, providing pathways to the formation of selected compositions or compositionally graded lms; in addition, differential crystallization of individual lms can be harnessed to fabricate crystalline high-dielectric lms interleaved with amorphous low-leakage lms. Here, the unique precursor chemistries and condensation processes are providing an entirely new, cost-effective bench-top approach to the deposition, study, and development of oxide lms with capabilities currently unknown with conventional vapor-based methodologies.
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Oftentimes you will fi nd that messages arrive when you re not using the phone or when you re outside of Messaging, doing something else. In each of these cases, Windows Phone notifies you of incoming messages, giving you a chance to reply immediately or at least see what s happening. If a new message arrives when the phone is locked and off, Windows Phone will play a notification sound and light up the screen, showing the lock screen. At the top of this screen, you ll see a notification toast, or overlay, displaying the text part of the message and who sent it (Figure 14-11). From here, you ll need to unlock the phone to viewthe phone phoneunlock the text message in Messaging and, potentially, reply. (If you try to tap the toast, the lock screen will instead bob up and down, indicating what you must do.) If you are doing something else with the phone when a message arrives, Windows Phone will again play a notification sound, and will again display the notification toast, overlaid on top of whatever screen you re currently viewing. This time, however, the toast is interactive: If you tap the overlay, Windows Phone will navigate directly into the correct conversation in Messaging. Nice!
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Setup installs TCP/IP by default when you install Windows Server 2008. In fact, you can t uninstall TCP/IP, although you can disable it for a particular interface.
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Figure 12-11: The main Kino window.
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We see that for current generation ULSI devices, the most important cases are the 3D parabolic DOS, and the 2D constant DOS. The 2-DEG in an inversion layer is discussed below, where we shall see that by combining the constant 2D DOS with the bulk 3D DOS, we get a so-called "staircase" DOS with very important ramifications. 7 Future, more esoteric ULSI devices may involve quantum wires or zero-dimensional "dots" which are characterized by singularities in the DOS. All of the above is true, with the caveat that the E(k) relationship is parabolic. While that is generally a good assumption near the band edges (that are populated), there are definite nonparabolicities in the bandstructure at higher energies, with concomitant effects on the DOS. This will be very important later when we look at carrier scattering rates, especially at high fields in small devices. The carrier energies can be so high that the nonparabolic DOS is probed in terms of the states available for electrons to scatter to. The DOS for any arbitrary E(k) can be determined as follows. The total volume in reciprocal space between E and (E + dE) is a surface integral =
two-port network and Figure 13.10 shows the impedance measured by network analyzer. Theoretically, the relations between the input and output voltage re ection coef cients, in and out, and input and output S parameters, S11 and S22, are in = S11 + out = S22 + S12 S21 L , 1 S22 L S12 S21 S . 1 S11 S (13.7) (13.8)
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