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Higher code rates, in particular rate 2/3 and rate 3/4 codes, are derived from this code by puncturing. In order to keep different code blocks independent of each other, the encoder must be initialized properly. Tail Biting Convolutional Codes (TBCC) use the last 6 bits of the code block to initialize the states of the encoder. This way the rst and last state of the encoder are same i.e., in the trellis representation, only those paths which start and end on a same node/state are the valid codewords. This overcomes the need to zero force the trellis to get back to zero state (compare 14). After encoding, the data are interleaved in a two-step process. The rst step makes sure that adjacent bits are not transmitted on adjacent subcarriers, which improves the frequency diversity. In a second step, adjacent bits are alternatingly mapped onto more or less important bits in the constellation. Turbo Codes One way to achieve higher performance in WiMAX is the use of turbo codes (see Section 14.6). A remarkable aspect of the turbo codes in WiMAX is that they are duobinary codes, i.e., the turbo encoding is not done on bits, but rather on 2-bit symbols. The resulting code has advantages compared to normal turbo codes in that it has larger minimum distance, better convergence, and less sensitivity to puncturing. On the downside, the decoder is more complex. Figure 28.4 shows the structure of the turbo encoder. A two-bit symbol A/B is used as an input to recursive convolutional encoders in two incarnations: directly, and after going through an interleaver. The interleaver rst ips bits within a symbol (it does that for every second symbol only); and then interleaves symbols. Each of the two convolutional encoders produces two parity bits, one for the normal order of the input symbol and one for the output of the interleaver. The resulting symbols are then interleaved (note that the regular WiMAX interleaver, as used, e.g., for the convolutional codes, is not used for turbo coding). As mentioned above, the standard foresees LDPC codes (compare Section 14.7) only as optional modes. HARQ WiMAX foresees two optional types of Hybrid Automatic Repeat reQuest (HARQ), namely, chase combining, and incremental redundancy, as described in Appendix 14.A.3 In chase combining (also called type-I HARQ), an FEC block is simply repeated, and the RX combines soft versions of the received signal. In incremental redundancy transmission (also called type-II HARQ), the TX sends multiple, differently encoded versions of the source data. The different encoding is achieved by changing the puncturing patterns. Which puncturing pattern is used is communicated in the beginning of an FEC block, by means of the SubPacket IDentity (SPID).
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The most amazing thing about that 192GB address space on Windows 7 Professional, Enterprise, and Ultimate is that it s a moving target and could, in fact, increase in the years ahead. In fact, it s increased since Windows Vista. On that system, the maximum amount of RAM was a relatively paltry 128GB. Ah, progress.
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The original network was designed to carry voice communication only. At the time, the only other form of telecommunication was telegraphy, which was the province of Western Union Telegraph Company in the United States. The contemporary PSTN still exists primarily to support voice communication. While much data traf c continues to tranverse the network, intensive data traf c largely travels specialpurpose data networks, or physical and logical partitions of the PSTN. The PSTN
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This high dielectric reduces the RF wavelength and consequently the length of the resonator by about 10 times. The resonator consists of two coaxial cables, with a common square outer conductor and cylindrical inner conductors. The inner and outer conductors are metallized onto the ceramic and then copper plated. There is no metallic surface between the two inner conductors, which allows for the coupling, and the amount of coupling is controlled by the spacing between the center conductors. Each resonator has a slightly different length, and thus a slightly different frequency. The ceramic block resonator has approximately the same RF lter characteristics as the microstrip lter shown in Figure 22.3, but it is only 5.7 mm long 3.5 mm wide 2.5 mm high. Surface Acoustic Wave (SAW) Filters The size of RF lters can be reduced by a factor of two in all dimensions (for a volume decrease of eight times) as compared to the ceramic block lter by using a SAW lter. A schematic drawing of a SAW lter is shown in Figure 22.5. It consists of a slab of piezoelectric material mounted in an RF transistor package. A piezoelectric material has the characteristic that when an electrical signal is applied to electrodes on its surface, it vibrates mechanically. Alternately, when it is vibrated mechanically, it generates an electrical signal. This characteristic is used to make loudspeakers for mobile phones. The choice of material determines the frequency range of operation. An IF lter for cellular phones can be made using quartz, which is piezoelectric. This IF lter is discussed in Section 22.5. Lithium niobate can be used to make an RF SAW lter for cell phone and wireless LAN frequency bands. Referring to Figure 22.5, the piezoelectric lithium niobate substrate is metallized, and two sets of interdigital ngers are photoetched on its surface at opposite ends of
116. Pathan, H. M.; Lokhande, C. D.; Kulkarni, S. S.; Amalnerkar, D. P.; Seth, T.; Han, S.-H. 2005. Some studies on successive ionic layer adsorption and reaction (SILAR) grown indium sulphide thin lms. Mater. Res. Bull. 40:1018 1023. 117. Ranjith, R.; John T. T.; Kartha C. S.; Vijayakumar K. P.; Abe T.; Kashiwaba Y. 2007. Post-deposition annealing effect on In2S3 thin lms deposited using SILAR technique. Mater. Sci. Semicond. Process. 10:49 55. 118. Deshpande, N. G.; Sagade, A. A.; Gudage, C. D.; Lokhande, C. D. 2007. Growth and characterization of tin disul de (SnS2) thin lm deposited by successive ionic layer adsorption and reaction (SILAR) technique. J. Alloys Compd. 436: 421 426. 119. Sartale, S. D.; Lokhande, C. D. 2000. Deposition of cobalt sulphide thin lms by successive ionic layer adsorption and reaction (SILAR) method and their characterization. Indian J. Pure Appl. Phys. 38:48 52. 120. Nistorica, C.; Liu, J.-F.; Gory, I.; Skidmore, G. D.; Mantiziba, F. M.; Gnade, B. E.; Kim, J. 2005. Tribological and wear studies of coatings fabricated by atomic layer deposition and by successive ionic layer adsorption and reaction for microelectromechanical devices. J. Vacuum Sci. Technol. A. 23:836 840. 121. Shi, Y.; Jin, Z.; Li, C.; An, H.; Qiu, J. 2006. Effect of [Cu]/[In] ratio on properties of CuInS2 thin lms prepared by successive ionic layer absorption and reaction method. Appl. Surf. Sci. 252:3737 3743. 122. Shi, Y.; Jin, Z.; Li, C.; An, H.; Qiu, J. 2007. Effects of post-heat treatment on the characteristics of chalcopyrite CuInSe2 lm deposited by successive ionic layer absorption and reaction method. Thin Solid Films 515:3339 3343. 123. Gulina, L. B.; Tolstoi, V. P. 2002. Synthesis of Ag7SbS6 nanolayers on the silica surface by ionic layer deposition. Russ. J. Gen. Chem. 72:840 843. 124. Lindroos, S.; Ruuskanen, T.; Ritala, M.; Leskel , M. 2004. Growth of Cu thin lms by the successive ionic layer adsorption and reaction (SILAR) method. Thin Solid Films 460:36 40. 125. Wang, L.; Kang, S.; Mu, J. 2006. Electrical properties of Ag thin lms deposited by the improved SILAR method. J. Dispersion Sci. Technol. 27:393 397. 126. Sankapal, B. R.; Ennaoui, A.; Guminskaya, T.; Dittrich, Th.; Bohne, W.; R hrich, J.; Strub, E.; Lux-Steiner, M. Ch. 2005. Characterization of p-CuI prepared by the SILAR technique on Cu-tape/n-CuInS2 for solar cells. Thin Solid Films 480 481:142 146. 127. Sankapal, B. R.; Goncalves, E.; Ennaoui, A.; Lux-Steiner, M. Ch. 2004. Wide band gap p-type windows by CBD and SILAR methods. Thin Solid Films 451 452:128 132. 128. Tolstoy, V. P.; Altangerel, B. 2007. A new uoride synthesis route for successive ionic layer deposition of the ZnxZr(OH)yFz nH2O nanolayers. Mater. Lett. 61:123 125. 129. Zhuchkov, B. S.; Tolstoy, V. P.; Murin, I. V. 1997. Synthesis of ScF3, LaF3 nanolayers and nLaF3-mScF3 multinanolayers at the surface of silicon by successive ionic layer deposition method. Solid State Ionics 101 103:165 170. 130. Muf er, H.-J.; Fischer, Ch.-H.; Diesner, K.; Lux-Steiner, M. C. 2001. ILGAR A novel thin- lm technology for sul des. Sol. Energy Mater. Sol. Cells 67: 121 127.
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