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The first feature that you create should be positioned relative to the Origin. Whether there is a corner of a rectangle that is coincident to the Origin, the rectangle is centered on the Origin, or dimensions are used to stand the rectangle off from the Origin at some distance, you need to lock the first feature to the Origin with every part you build. When working with a simple part, the entire part can usually be described as rectangular or cylindrical. In cases like these, it is easy to know where to start: you simply draw a rectangle or a circle, respectively. On complex parts, it may not be obvious where to start, and the overall part cannot be said to have any simple shape. In cases like these, it may be best to select the (or a) prominent feature, mounting location, functional shape, or focus of the mechanism. For example, if you were to design an automobile, what would you designate as the 0,0,0 Origin The ground might be a reasonable location as would the plane of the centers of the wheels. As long as everyone working on the project agrees, many different reference points could work. With that in mind, it seems logical to start the rectangular part by sketching a rectangle. Select the Top plane and sketch a rectangle centered on the part Origin.
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In general, second-order statistics (ACFs) cannot provide information about the phase of the channel impulse response. An exception occurs when the ACF of the received signal is periodic. Cyclostationary properties are thus the basis for blind estimation methods using second-order statistics. Similar to our discussion in 6, we distinguish between strict-sense and wide-sense cyclostationarity. A process is strict-sense cyclostationary if all its statistical properties are invariant to shifts by integer multiples of the sampling period Tper . For wide-sense stationarity, only the mean
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#!/bin/sh # mass mail a message (from a file) to addresses (from a file) # defaults: recipfile=recip.list msgfile=msg.txt subject= mass mailing log=massmail.log returnadd=$USER@`domainname` admin=$USER USAGE= massmail -s subject -r recipient-list -m message-file # Prompt with usage statement if no arguments are given. while [ $# -gt 0 ] do case $1 in -s) subject=$2 shift ;; -r) recipfile=$2 shift ;; -m) msgfile=$2 shift ;; *) echo $USAGE exit 1 ;; esac shift done sendmail=/usr/lib/sendmail mail=/usr/ucb/mail delay=1 if [ ! -f $recipfile ]; then echo cannot find $recipfile exit 1 fi if [ ! -f $msgfile ]; then echo cannot find $msgfile exit 1 fi # # calculate time estimated ndat=`wc -l $recipfile 2> /dev/null | awk {print $1} ` time=`echo $ndat $delay | awk {printf( %.2f ,($1*($2+1.88))/3600)} ` ( echo Mass mailing started at `date` echo echo subject line: $subject
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SONET is capable of carrying information at Gbps speeds with excellent performance characteristics, including error performance and network management. The pipe also can carry any variety of asynchronous and synchronous information (e.g., voice, data, video, and image) and present it in a number of frame sizes. While the STS-1 frame is the basic building block, multiple STS-1 frames can be linked together in a process known as concatenation. Concatenated STS-Nc (N = Number; c = concatenated) signals are multiplexed, switched, and transported over the network as a single entity. This approach, which currently is de ned for STS-3c and STS-12c, offers clear advantages where larger increments of bandwidth are required, because the overall level of overhead is reduced, thereby increasing the payload size. Example applications for concatenation include imaging and HDTV (High De nition TV). The SONET pipe consists of a path, virtual Tributaries, and tributary units:
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The Insert Part button can be found on the Features toolbar, or you can access this feature by choosing Insert Part from the menus. Insert Part enables you to insert one part into another part. When inserting the part, you have the option to insert solid bodies, axes, planes, cosmetic threads, surface bodies, and several other types of entities, including sketches and features. The PropertyManager interface for the Insert Part feature is shown in Figure 26.19.
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New in SolidWorks 2007 is the display of tangent edges in phantom line font for shaded models. Prior to 2007, tangent edges could only be shown in phantom line font if they were visible. This is a simple analysis technique that is often employed to see which faces on a model are really tangent. Deviation Analysis is a more detailed method, but simply showing tangent edges in a font shows most of what you need to know at a glance. Edges that are not tangent can also be analyzed separately in more detail.
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49. Knaak, J. B.; Leung, H.-W.; Stott, W. T.; Busch, J.; Bilsky, J. 1997. Toxicology of mono-, di-, and triethanolamine. Rev. Environ. Contam. Toxicol. 149:1 86. 50. Chen, C.-Y.; Kanicki, J. 1996. High eld-effect-mobility a-Si:H TFT based on high deposition rate PECVD materials. IEEE Electron Device Lett. 17:437 439. 51. Chaiken, A.; Nauka, K.; Gibson, G. A.; Lee, H.; Yang, C. C.; Wu, J.; Ager, J. W.; Yu, K. M.; Walukiewicz, W. 2003. Structural and electronic properties of amorphous and polycrystalline In2Se3 lms. J. Appl. Phys. 94:2390 2397. 52. Shay, J. L. 1975. Ternary Chalcopyrite Semiconductors: Growth, Electronic Properties, and Applications. International Series of Monographs in the Science of the Solid State, Vol. 7. Pergamon, New York. 53. Wasim, S. M.; S nchez Porras, G.; Tomlinson, R. D. 1982. Some electrical characteristics of copper- and indium-doped CuInTe2. Phys. Status Solidi A 71:523 530. 54. Davis, J. G.; Bridenbaugh, P. M.; Wagner, S. 1978. Electrical and optical properties of copper indium ditelluride crystal grown from near-stoichiometric compositions. J. Electron. Mater. 7:39 45. 55. Dawar, A. L.; Kumar, A.; Kumar, P.; Mathur, P. C. 1984. Field-effect studies on p-type CuInTe2 metal-insulator-semiconductor structures. J. Appl. Phys. 55:3695 3698. 56. Dagan, G.; Ciszek, T. F.; Cahen, D. 1992. Ion migration in chalcopyrite semiconductors. J. Phys. Chem. 96:11009 11017. 57. Kleinfeld, M.; Wiemh fer, H.-D. 1988. Chemical diffusion coef cients and stability of CuInS2 and CuInSe2 from polarization measurements with point electrodes. Solid State Ionics. 28 30:1111 1115. 58. Mitzi, D. B.; Yuan, M.; Liu, W.; Kellock, A.; Chey, S. J.; Deline, V.; Schrott, A. G. 2008. A high-ef ciency solution-deposited thin- lm photovoltaic device. Adv. Mater. 20:3657 3662. 59. Kolobov, A. V.; Fons, P.; Frenkel, A. I.; Ankudinov, A. L.; Tominaga, J.; Uruga, T. 2004. Understanding the phase-change mechanism of rewritable optical media. Nature Mater. 3:703 708. 60. Zhou, G.-F. 2001. Materials aspects in phase change optical recording. Mater. Sci. Eng. A 304 306:73 80. 61. Ovshinsky, S. R. 1970. An introduction to ovonic research. J. Non-Cryst. Solids. 2:99 106. 62. Lee, H.; Kim, Y. K.; Kim, D.; Kang, D.-H. 2005. Switching behavior of indium selenide-based phase-change memory cell. IEEE Trans. Magnetics. 41:1034 1036. 63. Kyratsi, T.; Chrissa s, K.; Wachter, J.; Paraskevopoulos, K. M.; Kanatzidis, M. G. 2003. KSb5S8: A wide bandgap phase-change material for ultra high density rewritable information storage. Adv. Mater. 15:1428 1431. 64. Berlepsch, P.; Miletich, R.; Armbruster, Th. 1999. The crystal structures of synthetic KSb5S8 and (Tl0.598K0.402)Sb5S8 and their relation to parapierrotite (TlSb5S8). Z. Kristallogr. 214:57 63. 65. Khulbe, P. K.; Wright, E. M.; Mansuripur, M. 2000. Crystallization behavior of as-deposited, melt quenched, and primed amorphous states of Ge2Sb2.3Te5 lms. J. Appl. Phys. 88:3926 3933.
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40. Johnson, S. E.; Burgoon, M. W. P.; Wang, Q.; White, J. M. 2006. Low-temperature preparation of anatase thin lms on tantalum. Langmuir 22:6570 6577. 41. Pathan, H. M.; Min, S.-K.; Desai, J. D.; Jung, K.-D.; Joo, O.-S. 2006. Preparation and characterization of titanium dioxide thin lms by SILAR method. Mater. Chem. Phys. 97:5 9. 42. Kale, S. S.; Mane, R. S.; Chung, H.; Yoon, M.-Y.; Lokhande, C. D.; Han, S.-H. 2006. Use of successive ionic layer adsorption and reaction (SILAR) method for amorphous titanium dioxide thin lms growth. Appl. Surf. Sci. 253:421 424. 43. Park, S.; Herman, G. S.; Kezler, D. A. 2003. Oxide lms: Low temperature deposition and crytallization. J. Solid State Chem. 175:84 87. 44. Tolstoy, V. P.; Ehrlich, A. G. 1997. The synthesis of CeO2+n n H2O nanolayers on silicon and fused-quartz surfaces by the successive ionic layer deposition technique. Thin Solid Films 307:60 64. 45. Tolstoi, V. P.; Tolstobrov, E. V. 2002. Synthesis of highly oriented -PbO2 layers on the surfaces of single-crystal silicon and quartz by successive ionic layer deposition. Russ. J. Appl. Chem. 75:1529 1531. 46. Tolstoy, V. P.; Murin, I. V.; Reller, A. 1997. The synthesis of Mn(IV) oxide nanolayers by the successive ionic layer deposition method. Appl. Surf. Sci. 112: 255 257. 47. Park, S.; Clark, B. L.; Keszler, D. A.; Bender, J. P.; Wager, J. F.; Reynolds, T. A.; Herman, G. S. 2002. Low-temperature thin- lm deposition and crystallization. Science 297:65. 48. Liu, J.-F.; Nistorica, C.; Gory, I.; Skidmore, G.; Mantiziba, F. M.; Gnade, B. E. 2005. Layer-by-layer deposition of zirconium oxide lms from aqueous solutions for friction reduction in silicon-based microelectromechanical system devices. Thin Solid Films 492:6 12. 49. Tolstoi, V. P. 1995. Syntheisis of Tl2O3 H2O nanolayers on a silica surface by ion deposition. Russ. J. Inorg. Chem. 40:208 210. 50. Gulina, L. B.; Tolstoi, V. P.; Murin, I. V. 2001. Study of Co Mn O and Li Co Mn O containing layers synthesized by successive ionic layer deposition on silica surface. Russ. J. Appl. Chem. 74:1955 1957. 51. Tolstoi, V. P.; Molotilkina, E. V. 1994. Synthesis of nanolayers of Y, La, and Eu hydroperoxides by ionic layering on the silicon surface. Inorg. Mater. 30:201 203. 52. Tolstoi, V. P.; Tolstobrov, E. V. 2004. Synthesis of hybrid Ag 0 MnO2 nH 2 O x metal oxide nanolayers by ionic deposition. Russ. J. Gen. Chem. 74:323 326. 53. Gulina, L. B.; Tolstoi, V. P. 2004. Synthesis on silica surface by the ionic deposition technique of nanolayers of heteropolycompounds on the basis of phosphomolybdic acid. Russ. J. Gen. Chem. 74:327 330. 54. Nicolau, Y. F.; Dupuy, M.; Brunel, M. 1990. ZnS, CdS and Zn1 xCdxS thin lms deposited by the successive ionic layer adsorption and reaction process. J. Electrochem. Soc. 137:2915 2924. 55. Nicolau, Y. F.; Menard, J. C. 1988. Solution growth of zinc sul de, cadmium sul de and zinc cadmium sul de thin lms by the successive ionic-layer adsorption and reaction process; growth mechanism. J. Cryst. Growth 92:128 42.
Two methods are available to create a report in Visual Studio 2005: using the report wizard and adding a blank report. The following steps represent the tasks involved to create a report, regardless of the method: 1. Add a report to the report project by selecting Project Add New Item. Select the Report Wizard template to have the wizard help you create a report, or select the Report template to create a blank report. 2. Create a data source. 3. Create one or more report data sets. 4. Design the report layout. 5. Add and configure report parameters. 6. Use the Preview tab on the Report Designer to preview the report.
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