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60. An overview and extensive references :o the charge pumping technique can be found in 1 of C. T. Wang, ed., Hot Carthi r Design Considerations MOS Devices and for Circuits, Van Nostrand-Reinhold, 1993. 61. W. Weber, M. Brox, R. Thewes, and 'N S. Saks, "Hot-Hole-Induced Negative Oxide Charges in n-MOSFET's," IEEE Tras. Electron Devices ED-42, 1473 (1995). 62. D. Vuillaume, J.-C. Marchetaux, P.-E. Lippens, A. Bravaix, and A. Boudou, "A Coupled Study by Floating Gate and Charge-Pumping Techniques of Hot-Carrier-Induced Defects in Submicrometer LDD n-NVCIOSFETs," IEEE Trans Electron Devices ED40, 773 (1993). 63. W. Chan, and T.-P. Ma, "Oxide Charge Buildup and Spread-out during Channel-HotCarrier Injection in NMOSFET's," IEE Electron Device Lett. EDL-13, 319 (1992). 64. N. S. Saks, and M. G. Ancona, "Determination of Interface Trap Capture Cross Sections Using Three-Level Charge Pumping," FEEElectron Device Lett. EDL-11, 339 (1990). 65. R. G.-H. Lee, J.-S. Su, and S. S. Chung;, "A New Method for Characterizing the Spatial Distribution of Interface States and Oxide-Trapped Charges in LDD n-MOSFET's," IEEE Trans. Electron Devices ED-43 X1 (1997). 66. H.-H. Li, Y.-L. Chu, and C.-Y. Wu, "A Novel Charge-Pumping Method for Extracting the Lateral Distribution of Interface-7rap and Effective Oxide-Trapped Charge Densities in MOSFET Devices," IEEE Trans. Electron Devices ED-44, 782 (1997). 67. U. Cilingiroglu, "A General Model for Interface Trap Charge-Pumping Effects in MOS Devices," Solid State Electron 28, 1127 (1985). 68. H.-H. Li, Y-L. Chu, and C.-Y Wu, "A New Simplified Charge Pumping Current Model and its Model Parameter Extraction," IEEE Trans Electron Devices ED-43, 1857 (1996). 69. D. Vuillaume, and B. Doyle, "Proper i's of Hot Carrier Induced Traps in MOSFET's Characterized by the Floating-Gate Technique," Solid State Electron. 35, 1099 (1994). 70. B. Doyle, J. Faricelli, K. Mistry, and D Vuillaume, "Characterization of Oxide Trap and Interface State Creation during Hot Catrier Stressing of n-MOS Transistors Using the Floating Gate Technique," IEEE Electron Device Lett. EDL-14, 63 (1993). 71. P. Speckbacher, J. Berger, A. Asenov, F Koch, and W. Weber, "The 'Gated-Diode' Configuration in MOSFETs, a Sensitive Tool for Characterizing Hot-Carrier Degradation," IEEE Trans. Electron Devices ED-42, 1287 (1995). 72. C. H. Ling, S. E. Tan, and D. S. Ang, "A Study of Hot Carrier Degradation in NMOSFET's by Gate Capacitance and Charge Pumping Current," IEEE Trans. Electron Devices ED-42, 1321 (1995). 73. A. Neugroschel, C.-T. Sah, K. M. Han, M. S. Carroll, T. Nishida, J.T. Kavalieros, and Y Lu, "Direct-Current Measurements of Oxide and Interface Traps on Oxidized Silicon," IEEE Trans. Electron Devices ED-42, 1657 (1995). 74. Y. Tososhima, F. Matsuoka, H. Hayashida, H. Iwai, and K. Kanzaki, "A Study of Gate Oxide Thickness Dependence of Hot Carrier-Induced Degradation for n-MOSFET's," Proc. Symp. VLSI Technol. 39 (1988). 75. K. Mistry and B. S. Doyle, "An Errpirical Model for The L-ff Dependence of Hot Carrier Lifetimes of n-Channel MOSFET's," IEEE Electron Device Lett. EDL-10, 500 (1989). 76. K. Mistry, and B. Doyle, "Hot Carrier Degradation in n-MOSFET's Used as Pass Transistors," IEEE Trans. Electron Devices EDL-37, 2415 (1990).
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