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which implies that ZP and ZL are at extreme opposites respectively, that is, ZP , if ZL 0, ZP 0, if ZL , (14.35) (14.36)
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Physical Random Access CHannel (PRACH): it is used for the random access, i.e., MS communicating to the BS before a connection with scheduling has been established. Figure 27.14 summarizes the mapping between the channels.
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1. W. C. R ntgen. Sitzungsber. physikal.-medizin. Gesello schaft, 132, 1895. 2. A. Michette. Nature (London) 353, 510, 1991.
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Figure 18.2 De nition of power gain is based on the readings at the load in two cases when re ections do or do not exist.
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The screen resolution determines how many pixels the game will cram onto the screen. Games look richer and more detailed at higher resolutions, but cranking up the pixel count degrades performance. I consider 1024x768 to be the minimum acceptable resolution, and depending on how powerful the graphics card is in the computer I m playing on, I try to get it up to 1600x1200.
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Use caution in raising the domain functionality. After it s raised, the domain no longer supports legacy domains. A domain that is set to Windows Server 2008 for a domain functional level cannot add domains that are running Windows 2000 Server.
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RFIC (RADIO FREQUENCY INTEGRATED CIRCUIT) AND SOC (SYSTEM ON CHIP)
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The Jog feature puts a pair of opposing bends on a flange so that the end of the flange is parallel to, but offset from, the face where the jog started. The Jog PropertyManager and a sample jog are shown in Figure 29.19.
Global Functional Plane. The GFP decomposes services into a collection of service-independent building blocks (SIBs) that can be chained together to build services and service features [4]. SIBs are service-independent and global. Service independence means that a SIB can be used to build different services. Global means that SIBs are network-wide concepts, unaware of the network elements used to implement them, and of how their functionality may be distributed across those elements. Examples of SIBs are charge, compare, and basic call process. In this plane a service is realized by linking together multiple SIBs under the control of a subset of the service logic program. The SLP is broken into packages (one per service) called global service logic (GSL), which interact with instances of the basic call process (BCP), as shown in Fig. 18.1-3. The BCP is a special SIB that controls building and releasing connections and is an abstract monolithic process, unaware of how it may be distributed among functional entities. Instances of the BCP typically run in local exchanges (access nodes) that provide access to users.
30. Bachtold, A.; Hadley, P.; Nakanishi, T.; Dekker, C. 2001. Logic circuits with carbon nanotube transistors. Science 294:1317 1320. 31. Collins, P. G.; Arnold, M. S.; Avouris, P. 2001. Engineering carbon nanotubes and nanotube circuits using electrical breakdown. Science 292:706 709. 32. Xia, Y.; Yang, P.; Sun, Y.; Wu, Y.; Mayers, B.; Gates, B.; Yin, Y.; Kim, F.; Yan, H. 2003. One-dimensional nanostructures: synthesis, characterization and applications. Adv. Mater. 15:353 389. 33. Lieber, C. M.; Wang, Z. L. 2007. Functional nanowires. MRS. Bull. 32:99 104. 34. Morales, A. M.; Lieber, C. M. 1998. A laser ablation method for the synthesis of crystalline semiconductor nanowires. Science 279:208 211. 35. Duan, X.; Lieber, C. M. 2000. General synthesis of compound semiconductor nanowires. Adv. Mater. 12:298 302. 36. Duan, X.; Lieber, C. M. 2000. Laser-assisted catalytic growth of single crystal GaN nanowires. J. Am. Chem. Soc. 122:188 189. 37. Cui, Y.; Lauhon, L. J.; Gudiksen, M. S.; Wang, J.; Lieber, C. M. 2001. Diametercontrolled synthesis of single-crystal silicon nanowires. Appl. Phys. Lett. 78: 2214 2216. 38. Gudiksen, M. S.; Wang, J.; Lieber, C. M. 2001. Synthetic control of the diameter and length of single crystal semiconductor nanowires. J. Phys. Chem. B 105:4062 4064. 39. Duan, X.; Huang, Y.; Cui, Y.; Wang, J.; Lieber, C. M. 2001. Indium phosphide nanowires as building blocks for nanoscale electronic and optoelectronic devices. Nature 409:66 69. 40. Gudiksen, M. S.; Lauhon, L. J.; Wang, J.; Smith, D.; Lieber, C. M. 2002. Growth of nanowire superlattice structures for nanoscale photonics and electronics. Nature 415:617 620. 41. Lauhon, L. J.; Gudiksen, M. S.; Wang, D.; Lieber, C. M. 2002. Epitaxial core-shell and core-multi-shell nanowire heterostructures. Nature 420:57 61. 42. Huang, Y.; Duan, X.; Cui, Y.; Lieber, C. M. 2002. Gallium nitride nanowire nanodevices. Nano Lett. 2:101 104. 43. Cui, Y.; Duan, X.; Hu, J.; Lieber, C. M. 2000. Doping and electrical transport in silicon nanowires. J. Phys. Chem. B 104:5213 5216. 44. Huang, Y., Lieber, C. M. 2004. Integrated nanoscale electronics and optoelectronics: Exploring nanoscale science and technology through semiconductor nanowires. Pure Appl. Chem. 76:2051 2068. 45. Gudiksen, M. S.; Wang, J.; Lieber, C. M. 2002. Size dependent photoluminescence from single indium phosphide nanowires. J. Phys. Chem B 106:4036 4039. 46. Xiang, J.; Lu, W.; Hu, Y.; Wu, Y.; Yan, H.; Lieber, C. M. 2006. Ge/Si nanowire heterostructures as high-performance eld-effect transistors. Nature 441:489 493. 47. Li, Y.; Xiang, J.; Qian, F.; Gradecak, S.; Wu, Y.; Yan, H.; Blom, D. A.; Lieber, C. M. 2006. Dopant-free GaN/AlN/AlGaN radial nanowire heterostructures as high electron mobility transistors. Nano Lett. 6:1468 1473. 48. Qian, F.; Gradecak, S.; Li, Y.; Wen, C.; Lieber, C. M. 2006. Core/multishell nanowire heterostructures as multicolor, high-ef ciency light-emitting diodes. Nano Lett. 5:2287 2291.
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