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The physical layer provides data transport between the MS and BS and manages frequencies, timing, modulation, demodulation, coding, spreading, despreading, and power control [36 40]. UTRAN uses a frequency band of 5 MHz and a chip rate of 3.84 Mc/s for both the uplink and the downlink channel. The physical layer interfaces with the MAC sublayer via transport channels and with the peer physical layer (at the far end of radio link) via physical channels. Physical channels are listed in Table 13.4-1; transport channels and the physical channels they map into are shown in Table 13.4-2. Each transport channel maps into a physical channel, and more than one transport channel may map into the same physical channel. The physical channels that do not map into transport channels perform layer 1 signaling functions only. Physical channels are separated by spreading codes and scrambling codes. Each channel s baseband signal is rst spread with a spreading (channelization) code and then multiplied by the scrambling code. A high-level conceptual view of how physical channels are realized is shown in Fig. 13.4-3. Figure 13.4-3(a) shows a downlink channel (except SCH) and Fig. 13.4-3(b) shows a group of uplink channels. Scrambling Codes. These codes are PN sequences used in the uplink channel to separate transmissions from individual MSs, and in the downlink channel to separate cells or cell sectors. The uplink channel uses short or long scrambling codes, based on channel type: some channels use only long codes, while some may use either long or short codes. The choice, for the channels that allow it, is an implementation decision. Long codes are based on Gold code sequences with a length of 22521 chips, of which only a section (38,400 chips) is used. Short codes are based on S(2) codes with a length of 256 chips. Each mobile station uses several scrambling codes, out of a pool of 224 (16.8 M). The downlink channel uses long codes, based on Gold code sequences with a length of 21821 chips, of which only a section (38,400 chips) is used. Codes are picked from a pool of 8192 codes, out of a theoretical total of 262,143. The pool of codes is divided into 512 sets made of one primary and fteen secondary scrambling codes, and each cell uses one set. The number of primary codes is kept small to speed up cell search, and they are arranged into 64 code groups, each containing eight primary codes. Spreading Codes. These codes are used to separate individual code channels in both the downlink and uplink directions, within the broader channels created by scrambling codes. To provide exible data rates, UTRAN uses orthogonal variable spreading factor (OVSF) codes, which are orthogonal Walsh codes of variable length. Walsh codes in an equal-length set are orthogonal, but Walsh codes of different lengths are not necessarily so. OVSF is a tree-based algorithm that generates sets
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The most famous bad habit former AutoCAD users use is overriding dimension values. Apparently due to popular demand, the Primary Value Override is now available in SolidWorks, in the Dimension PropertyManager, as shown in Figure 23.11. This option was added to the software mainly to enable the creation of dimensions with words instead of numbers, as shown in Figure 23.12.
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lifetime estimation, n-MOS hot-hole-generated electron traps, 295-296 Hooke's law, phonon scattering, 177-181 Hot carrier effect (HCE): Boltzmann transport equation (BTE), 200 damage identification, 278-281 interface states, 278-279 oxide traps, 279-280 relaxable states, 280-281 floating-gate memory physics, charge transfer, 379 future research, 322-324 lifetime estimation, AC and DC, 294-295 n-MOS AC stress lifetimes, 297-299 n-MOS static damage modes, 295-297 p-MOS static damage modes, 299-302 measurement techniques, 302-310 charge-pumping technique, 303-308 DCIV method, 310 floating-gate technique, 308-309 gated-diode technique, 309-310 gate overlap capacitance, 310 MOSFET parasitic effects, 111-119 draft engineering, 118-119 energy distribution functions, 116-118 experimental background, 111- 112 phenomenological model, 112-116 n- and p-channel transistors: heating systems, 276-278 research background, 275 process dependence, 314-322 back-end processing, 321-322 oxidation, 317-321 plasma damage, 314-317 stresses, gate voltage dependence: high voltage stressing, electron trapping, 287-288 intermediate stresses, 281-283 low stress, 283-287 p-MOS systems, 288-294 structure dependence, 310-314 drain engineering, 311 -312 length, 311 mechanical stress, 313-314 oxide thickness, 312-313 Hot carrier negative-bias temperature instability (HC-NBTI), p-MOS devices, 293 Hot-electron injection: floating-gate memory, endurance failures, 423-424 floating-gate memory physics: charge transfer, 379 charge transfer, avalanche injection, 381 Hybrid matrix, bipolar transistors, 24
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Figure 8.70 Chip architecture of a one transistor, one capacitor ferroelectric memory cell. The capacitor may be fabricated above the CMOS transistors either over the field oxide or over the CMOS pass transistor itself.
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5: Cascading Style Sheets
Computer security threats are universal. Almost all computers are at risk. Many of the tasks you take for granted can lead to security breaches: meandering through the Web, installing software, and even walking away from the computer are all risky procedures. The only way to live without security threats is to move to a small island with your computer and live without Internet access, software to install, and other people; or to shut down the computer, unplug it, and find something else to do.
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Synchrotrons represent the major source of powerful X-rays and will continue to play a dominant role for X-ray science in the foreseeable future. Nevertheless, a wide range of X-ray applications in science, technology and medicine would greatly bene t from (i) X-ray pulse durations much shorter than routinely available from synchrotrons (few hundred picoseconds), (ii) synchronizability of ultrashort pulses to other events, and (iii) availability of useful uxes from compact laboratory X-ray sources. Triggered by these demands a large number of research groups made enormous efforts to develop novel generation X-ray sources driven by high power lasers. Advances in ultrashort-pulse high-power laser technology over the last decade (Perry and Mourou, 1994; Umstadter et al., 1998) paved the way towards compact, versatile laboratory X-ray sources in a number of laboratories for spectroscopic as well as other applications. Ultrashort-pulsed Xray radiation became available from femtosecondlaser-produced plasmas (Gibbon and F rster, 1996; o Giulietti and Gizzi, 1998; and references therein). These sources are now capable of converting up to several per cent of the driving laser pulse energy into incoherent X-rays emitted in a solid angle of 2 4 and delivering pulses with durations down to the subpicosecond regime. Femtosecond laser produced plasma sources matured to a point where a wide range of applications can be tackled in a wide spectral range extending from the
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