Part V: Keeping Up with the Joneses: Maintenance and Upgrades in .NET

Generation UPCA in .NET Part V: Keeping Up with the Joneses: Maintenance and Upgrades

When creating relations that need to adapt to the biggest range of changes to the model, it is best to go as far back in the model history as you can to pick up those relations. In most cases, this means creating relations to sketches rather than to edges of the model. Model edges can be fickle, with the use of fillets, chamfers, and drafts. This best practice tip will become more significant the first time you create a feature built from model edges, and then make changes that break relations.
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We will use the standard Gaussian approximation theory presented Pursley [72] to repreby sent the MAI. When the desired user sequence is chip- and phase-synchronous with all the interfering sequences, wherethe phase-synchronous relationship is defined as in the absence of noise, the worst-case probability of error Prb ( E ) performance was given by Pursley [72] as: (1.28) where Q(.) is the Gaussion Q-functionof Equation 1.9, since the synchronous transitions do not generate pure random Gaussian-like impairments. This formula would be characteristic of the synchronous downlink scenario Section l .2.4.1. However, in practical uplink situaof tions as augmented in Section, there is always some delay among users, and each the received signal will be phase-shifted independently. In this case, according to Pursley, the probability of error in the absence of noise will be [72]: (1.29) Equation 1.29 represents the best performance corresponding to Gaussian-like impairments. In between these two extremes are situations whereby, in the first case, the desired sequence andthe interfering sequence are chip synchronousbut not phase synchronous. The probability of error in the absence of noise is given by [72]:
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The Command window is used for executing commands directly in the Visual Studio .NET environment, bypassing the menu system, or for executing commands that do not appear on any menu.
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suffering a collision and without being scattered and are injected into the oxide (nonstationary transport regime). Transistors in this regime would be expected to suffer less hot-carrier damage. It has been seen that very short-gate-length transistors show less impact-ionized substrate current, but definitive data showing decreased hotcarrier damage have yet to be published. Decreasing oxide thickness plays an important role in the hot-carrier effect in two ways: 1. As the thickness of the gates approaches the tunneling distance, charge trapping tends to become less important and the principal HC damage goes from predominantly electron trapping to interface state creation. 42 This can be understood in terms of the tunneling distance of the charge from the oxide. Cohen et al. have shown 33 that oxide traps near the Si-SiO2 begin to behave like interface states, when these states are situated between 1.2 and 1.8 nm from the interface. Thus, for oxides of thicknesses of the order of 4.0nm and thinner, the problem of oxide trapping steadily diminishes, and the interface state creation mechanism becomes the predominant factor, for both n- and p-channel transistors. Beyond this, the advent of high dielectric-constant dielectrics to replace SiO 2 (if such a search is successful) will spawn a further chapter in the study of the hot-carrier effect. 2. Equally important, at some point in gate oxide scaling, the gate oxide begins to suffer significant leakage due to direct tunneling. This point is reached around 3 nm, although the thickness at which the oxide begins to improve from the plasma damage depends very much on the quality of the oxide-oxides with less leakage current for a given oxide thickness will suffer more oxide damage. When the gate oxide begins to leak sufficiently, it will no longer be completely capacitive, but will have a resistive component. Charge building up on the gate during plasma processing will start to leak away. At a certain oxide thickness, it will no longer be possible to maintain sufficient potential across the oxide to cause plasma damage and the plasma charging issue will be largely solved through gate oxide scaling-if the circuits are found to support these high levels of leakage current. Finally, with respect to voltage, Figure 6.27 shows the lateral field (approximated by the supply voltage over the effective length of the shortest transistor) taken from the Silicon Industry Association's National Technology Roadmap (NTR).1 29 There are several trends evident in this figure. For the longer transistor lengths, the lateral fields have increased with each succeeding generation. This was because the power supply was held constant in order to preserve compatibility of voltages between the chips on an integrated circuit board. It is these increases in the lateral field that have led to the interest in the HCE in the 1990s. However, recent generations have dropped power supply voltages, leading to decreasing lateral fields in the channel region over the past few lithography generations and, consequently, there has been less concern with the issue of hot carriers than there was before. Looking into the future, however, two forces are driving the power supply: channel-length scaling, or the need to reduce the power that chips output; and the need to increase the circuit speed. These two forces and the application of the
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the drive After you ve run the Windows Vista Upgrade Advisor and have verified that you have the least 15 GB of hard drive space available on the drive, you should then run the DEFRAG and ScanDisk utilities on the drive partition.
object collections depending on the structure of your organization. For example, a school district will typically be very different in organization from the structure found in a government agency or a corporation. OUs are similar in function to domains in that they contain a collection of objects manageable through the directory (see Figure 7.5). There are major differences, however, as outlined in Table 7.1. Think of an OU as an administrative unit or grouping, just as exists in your organization. The beauty of this model is that it allows the hierarchy and directory to mimic a company s structure, which benefits the user and administrative staff by presenting a familiar framework. Like domains, the OU is a container, and therefore holds domain objects such as users, groups, servers, workstations, printers, databases, security policies, and even other OUs. Moreover, an OU may hold more than one of the same type of object, such as a group. This comes in handy when applying different permissions to resources in the domain. Additionally, OUs do not require the overhead of a domain controller, or domain for that
junctions that drops some of the lateral field across this region. Consequently the field in this region is not as great as in :he conventional transistor and the lifetimes 79 are longer. Two points need to be added here: (I' for performance reasons (drive currents), the LDD region doping concentration in scaled MOSFETs is becoming comparable to that of the source/drain junction, and it is becoming more difficult to alleviate hotcarrier effects; and (2) in p-MOS devices, the trapping in the LDD region can result in a larger change in effective length for devices stressed under electron trapping conditions, and the hot-carrier properties can sometimes be worse with an LDD than without one.80 Careful engineering is thus required to optimize this region from the hot-carrier standpoint. Elevated Source-Drains Elevated source-drains have also been suggested as a potential method of decreasing hot-carrier susceptibility. Tas&h et al. suggested that by building in an n-field reduction region through selective silicon epitaxy of the junction regions, the 82 hot-carrier effect could be alleviated8t Other similar structures have also been built However, as noted in the LDD discussion above, any "field-reducing" region introduced into the transistor acts tc lower the drive current of the device. Consequently, careful engineering is required in this junction edge region. 6.6.3 Oxide Thickness
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