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The next features that you will apply are a pair of counterbored holes. SolidWorks has a special tool that you can use to create common hole types, called the Hole Wizard. The Hole Wizard is a tool that helps you to create standard hole types using standard or custom sizes. You can place holes on any face of a 3D model or constrain them to a single 2D plane or face. A single feature created by the Hole Wizard may create a single or multiple holes, and a feature that is not constrained to a single plane can create individual holes originating from multiple faces, non-parallel, and even non-planar faces (holes may go in different directions). All holes in a single feature that you create by using the Hole Wizard must be the same type and size. If you want multiple sizes or types, then you must create multiple features.
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tgox, for logic technology and that for feature sizes on the order of 0.3 gtm the logic technology gate oxide becomes thinner than the tunnel oxide. The thickness of the interpoly dielectric, tdiel, scales at a rate -ctween the other two insulators. Note also that the junction depth for the drain-side CHE programming, Xjprog, scales much more rapidly than does the source-drain junction for the logic technology, xjlog, with the crossover occurring near 1 gm. This suggests that the effective channel length of drain side CHE programming cells may not scale as rapidly as the effective channel length of logic technology unless the gate oxide is scaled more aggressively. The voltage for tunneling is determined by the tunnel oxide thickness given that the control-gate coupling ratio remains constant. This means that this bias, Vtn, is the most slowly scaling bias voltage because the tunnel oxide thickness changes very slowly, as can be seen in Figure 8.42a. The rate of scaling of the various bias voltages is shown in Figure 8.42b. It is apparent from this figure that the logic power supply bias, VDD, is decreasing much faster than either the gate bias required for CHE programming, Vpp, or the very slowly varying tunneling bias, Vtn, as the feature size decreases. The other two biases of interest, the drain bias for CHE programming, Vdp, and the drain bias fcr read, VDR, decrease slightly more slowly than Vpp with decreasing features size. Despite the difficulty in scaling some floating-gate features and the associated limits on voltage scaling, floating-gate cells fabricated with 0.2-jm process technology that occupy - 0.25 jim 2 and are suitable for the manufacture of gigabit flash memories have been reported. 32 It i; :easonable to believe that many more such floating-gate memory cells employing different approaches will be developed and that the technology will be pushed to 4 Gb and beyond. 8.6 8.6.1 SILICON NITRIDE MEMORY Introduction to Silicon Nitride Memory
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A sketch point has been added to the subassembly to precisely identify the point on the gripper that is to be positioned. Sketch points have also been added to the main assembly to represent parts that need to be picked up by the robotic arm. Check the derived configurations under the default config. Notice that when you switch between certain configurations, the parts seem to separate. Moving one of the links causes the parts to snap back together again. This is probably because there are so many options when moving between configurations that the software has difficulty choosing a final position. This is definitely one of the potential problems when using configured mates to show an assembly in various positions.
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* The configuration level refers to Server, Database, or Connection.
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Figure 12-61: Preview changes as you make them
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