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11.1 NOISE FIGURE METER SETUP Figure 11.1 shows a typical noise gure test setup. The input to the DUT is a noise source, typically an avalanche diode. The special property of the avalanche diode is that when it is switched on the output is broadband noise at a level of about 14 dB above thermal noise. The noise diode has a control signal that turns it on and off. When the noise diode is turned off, the input to the DUT is thermal noise. When the noise diode is turned on, the input to the DUT is an approximately 14 dB larger signal with the same frequency characteristics as the thermal noise. The ratio between the two input signals is the input S/N to the DUT. Note the input signal and the input noise are too small to be measured directly, but their ratio is set by the characteristics of the noise diode. The output S/N of the device can be measured, and the noise gure of the device can be determined. A photograph of the noise diode is provided in Figure 11.2.
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Capacitor area, DRAM (dynamic random access memory) circuits, memory cell scaling, 337-339 Capacitor dielectric leakage, DRAM (dynamic random access memory) circuits, 343-344 Capture cross-section: charge-pumping detection, interface-state levels, 307 hot-carrier effect (HCE): low gate voltage stresses, 287 oxide traps Not, 280 Carrier-carrier scattering: device simulation, 176-177 inner-box shaped transistor, temperature dependence, collector current, 40-42 Carrier concentrations, Boltzmann transport equation (BTE), 193 Carrier distribution, MOSFET models, device scaling, 86-88 Carrier velocity, MOSFET transport properties, vs. electric field, 102-103 Cascode voltage switch logic (CVSL): CMOS digital switching, 489-492 CMOS low-noise amplifiers (LNA), highly integrated transceivers, 505-508 Cauer filter, inner-box shaped transistor, onedimensional heat transfer, 49 CB (collector-base) junction: bipolar transistors, 20-22 inner-box shaped transistor, 27-29 high-frequency behavior, 37-39 self-adjusted transistor structures, polysilicon base, 52-55 CBiCMOS, bipolar transistors, 249-250 Cell scaling, DRAM (dynamic random access memory) circuits, 335-339 Cell stability analysis, SRAM (static random access memory) circuits, 364-365 Central processing unit (CPU): digital blocks, system-on-chip applications, 637-639 MOSFET technology and, 7 Channel dopant NSub engineering, high-speed digital applications, short-channel effects (SCE), 557-560 Channel hot-electron (CHE) injection: floating-gate memory arrays: disturb failures, 424-426 scaling trends, 426-430 UV EPROMS, 397-399 floating-gate memory physics, charge transfer, avalanche injection, 381-383 triple-poly, virtual ground (TPVG) flash cell, 412-414
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First, the list command was used to show the source code line numbers. Next, a breakpoint is created at the main label using the break command, and the program is started with the run command. Because the breakpoint was set to main, the program immediately stops running before the first source code statement after main. The next command is used to step to the next line of source code, which executes the printf statement in the C code. Another next command is used to execute the return statement in the C code, which terminates the application. Although the application terminated, you are still in the debugger and can run the program again.
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Part III Developing with SQL Server
Databases deal with the three transactional faults by establishing isolation between transactions. The level of isolation, or the height of the fence between transactions, can be adjusted to control which transactional faults are permitted. The ANSI SQL-92 committee has specified four isolation levels, listed in Table 51-1.
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