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firewall, antivirus, and automatic updating functionality installed on the computer and ensures that they re running and up-to-date. (The Windows Vista version was improved to monitor other security features, including antispyware, User Account Control, and Internet Explorer 7 s anti-phishing feature, among others.) In Windows 7, this functionality has been expanded yet again to include system maintenance and other monitoring. As a result, the feature has been renamed Action Center. Action Center is also covered in 7.
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Part III Developing with SQL Server
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FIGURE 23.7 The Dimension PropertyManager interface
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Electron Traps It has been shown above that hot-hole injection causes hole trapping in the oxide, a not unexpected result. We shall now examine electron trap creation by hot holes, an unexpected, non-obvious consequence of hot-hole injection. Returning to Figure 6.6 for a device stressed at Vd = 8.5 V, Vg = 1.5 V, curve (a) represents the unstressed measurements, and (b) represents the device after 10,000 s of stressing, which results in the trapping of a positive charge in the oxide. Now, if immediately after this stress, the device were to be further subjected to a short electron-injection stress phase for 6 s at Vg = Vd = 8.5 V (to inject negative charge into the oxide 4 ), the Id-Vg curves would shift considerably (by 0.5 V!) to higher gate voltages (Fig. 6.6c). Since changes of this nature do not arise from interface states (their occupancy depends simply on the Fermi level in the silicon, as mentioned earlier), the shift from curve (a) to curve (c) in Figure 6.6 can only be explained in terms of oxide traps. The injection of electronic charge following the stressing of a transistor under hothole injection conditions causes an extremely large degradation in the device characteristics resulting from a change in the occupancy of the traps in the oxide. There are two interpretations of the oxide trap occupancy. The first is that there are only hole traps and interface states created under these conditions; the switching between Figure 6.6, curves (b) and (c) are due solely to neutralization of the positive hole traps, which were masking the effect of the interface states. The second is that the shift in the I-V characteristics is a result of emptying of the hole traps and the 21 filling of what are called neutral electron traps. It has been shown that the second interpretation is true. Arguments are somewhat complex, and are elaborated elsewhere. 24 ,25 Recently, further confirmation that neutral electron traps are indeed created has been made using impact-ionized substrate current and multiplication factor experiments. 26 Indeed, neutral electron traps have also been detected using other detection methods, which are discussed in Section 6.5. Similar neutral electron-trap generation has been seen in MOS capacitors subjected to high-field Fowler-Nordheim stressing,2 7 where it was proposed that the electron trap is caused by hole trapping in the oxide and that a Si0 2 bond is broken in the process, leaving a trivalent silicon atom as the hole trap site and the nonbridging oxygen atom as the neutral electron trap. The trapped holes, thus, create equal quantities of electron and hole traps. A similar mechanism might take place under the low-voltage stressing conditions in these transistors. There are, then, three types of damage occurring at low gate voltages (around Vg = Vd/5), interface states (in small quantities), oxide hole traps and oxide electron traps. When the damaged device is subjected to electron injection, the positive hole traps are neutralized, and the electron traps are now filled. The observed degradation (in Figure 6.6c) is due to both electron traps and interface states. If a series of transistors are stressed as a function of gate voltage (for a given drain voltage), and an electron pulse is then applied to them (Figure 6.7b), the degradation peaks at low gate voltages, voltages corresponding to the hole gate-current peak (see Figure 6.2). This strongly links these types of damage to hot-hole injection into the oxide. Figure 6.7a also shows the magnitude of the damage before electron injection. At this
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CHAPTER 2. BURST-BY-BURST ADAPTIVE WIRELESS TRANSCEIVERS
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Figure 17-8: Power Options is your central management console for the Windows 7
Signal Analysis: Wavelets,Filter Banks, Time-Frequency Transforms and Applications. Alfred Mertins Copyright 0 1999 John Wiley & Sons Ltd Print ISBN 0-471-98626-7 Electronic ISBN 0-470-84183-4
All Windows Phones use ClearType sub-pixel rendering technologies for super-clear text displays. But Microsoft is only specifying a 16-bit color screen as the minimum, so some higher color (24-bit) images might have visual banding. If it s advertised this way, consider a Windows Phone with a 24-bit color screen for superior visuals.
is to apply a common threshold to all channels. Thus, variations of gain and/or discriminator offset with respect to the nominal values affect the noise counts and ef ciency in a similar way as the noise of a given channel. Even with a simple circuit with a single threshold discriminator one can extract spectroscopic information by scanning the threshold and measuring that way the integral distribution of pulse amplitudes. An example of such measurements performed by means of the ASIC described in Grybo et al. (2002) is shown in Figure 4.5.14. s The plot shows complex X-ray spectra derived from integral ones measured simultaneously in 64 channels of the readout ASIC. One can notice that the spread between channels is really smaller than the noise of each particular channel. The differences of intensity in different channels are due to a particular distribution of X-ray intensity across the strips of the detector. Such measurements are essential for diagnostics of the system and for optimizing threshold setting for position measurements. In some applications of strip detectors for position sensitive measurements the requirements concerning energy resolution are not very demanding. In fact, for detection systems working at room temperature usually one cannot achieve the energy resolution like in dedicated high resolution X-ray spectrometers. The requirements for the resolution of an ADC used for measurements of signal amplitudes are moderate and 6 to 8 bits can be suf cient. A simple scheme to extract information on signal amplitudes is based on the time-overthreshold principle (Becker et al., 1996; Manfredi et al., 2000). The idea is illustrated schematically in Figure 4.5.13(b). The analogue signal from the front-end circuit is applied to a simple threshold discriminator like in the binary scheme. The duration time of the discriminator response is measured in a simple way by counting pulses from a clock generator over the period equal to the duration of the discriminator response. The width of the discriminator response depends on the relative amplitude with respect to the threshold and so contains some information about the signal amplitude. A response function of such a system is nonlinear,
mm and the X-ray production cross-section is 100 times larger than at 3 MeV, so that still 10 % of the K X-rays of lead will reach the detector from 3 mm below the surface. For several elements the different absorption of two X-ray lines in their passage through the matrix gives a yield ratio (e.g. Pb L /Pb K ) related, in layered samples, to the average depth at which the element is present. The depth can be quoted as an equivalent CaCO3 thickness since this material should match the average absorption coef cients of the real matrix. The unperturbed peak intensity ratios are extracted from thin pure foils of Cu, Ag, Au and Pb. Two samples were prepared on a Cu backing with a slightly different layers sequence: Au foil, cinnabar (HgS), yellow ochre, lead-tin yellow (Pb2 SnO4 ), azurite (2CuCO3 .Cu(OH)2 ) and, in the second sample, an extra lead-white (PbCO3 .2Pb(OH)2 ) layer after the gold foil. As seen in Figure 7.3.7 the sequence is well reproduced, which is more significant information than the layer s actual thickness (doubled by the method!) since the latter changes
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Part V
BACKGROUND AND MOTIVATION Electronics Technologies
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102 2 12 8 Residuals 4 0 4 8 12 2 3 4 5 Energy (keV)
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